Revolutionizing Storage Chip Technology with 2D Ferroelectric Material
In 2022, Yangtze Memory Technologies Co, China’s top memory chip producer, faced trade restrictions from the US, prompting China to invest heavily in technology to develop its storage chip production. This led to a significant drop in storage chip prices and the breakthrough achievement of mass production, ending the foreign manufacturers’ industry monopoly.
Now, a Chinese research team has made a groundbreaking discovery in the field of ferroelectric materials. By constructing ferroelectric materials in layers, they have successfully created a nanometre-thick two-dimensional layered material named 3R-MoS2. This new material exhibits zero performance degradation after millions of cycles, surpassing traditional ion-type ferroelectric materials like PZT in durability and read/write limitations.
These innovative storage chips made from 3R-MoS2 could revolutionize technology in extreme environments like aerospace and deep-sea exploration. Furthermore, the material’s tiny size will greatly increase storage density in applications such as data centers. This discovery has the potential to reshape the global market and potentially influence the US-China rivalry in AI technologies.